ds30159 rev. 5 - 2 1 of 3 mmsta63/MMSTA64 www.diodes.com mmsta63/MMSTA64 pnp surface mount darlington transistor ? epitaxial planar die construction ? complementary npn types available (mmsta13/mmsta14) ? ultra-small surface mount package ? ideal for medium power amplification and switching ? high current gain ? also available in lead free version characteristic symbol mmsta63 MMSTA64 unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -10 v collector current - continuous (note 1) i c -500 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 k/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a m j l e d b c h k g b e c mechanical data ? case: sot-323, molded plastic ? case material - ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020a ? terminals: solderable per mil-std-202, method 208 ? also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 2 ? terminal connections: see diagram ? mmsta63 marking k2e, k3e (see page 2) ? MMSTA64 marking k3e (see page 2) ? ordering & date code information: see page 2 ? weight: 0.006 grams (approx.) sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. c e b
ds30159 rev. 5 - 2 2 of 3 mmsta63/MMSTA64 www.diodes.com characteristic symbol min max unit test condition off characteristics (note 2) collector-emitter breakdown voltage v (br)ceo -30 ? v i c = -100 av be = 0v collector cutoff current i cbo ? -100 na v cb = -30v, i e = 0 emitter cutoff current i ebo ? -100 na v eb = -10v, i c = 0 on characteristics (note 2) dc current gain mmsta63 MMSTA64 mmsta63 MMSTA64 h fe 5,000 10,000 10,000 20,000 ?? i c = -10ma, v ce = -5.0v i c = -10ma, v ce = -5.0v i c = -100ma, v ce = -5.0v i c = -100ma, v ce = -5.0v collector-emitter saturation voltage v ce(sat) ? -1.5 v i c = -100ma, i b = -100 a base- emitter saturation voltage v be(sat) ? -2.0 v i c = -100ma, v ce = -5.0v small signal characteristics current gain-bandwidth product f t 125 ? mhz v ce = -5.0v, i c = -10ma, f = 100mhz electrical characteristics @ t a = 25 c unless otherwise specified ordering information (note 3) device packaging shipping mmsta63-7 sot-323 3000/tape & reel MMSTA64-7 sot-323 3000/tape & reel notes: 2. short duration test pulse used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: MMSTA64-7-f. marking information kxe ym kxe = product type marking code, e.g. k2e = mmsta63 ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
ds30159 rev. 5 - 2 3 of 3 mmsta63/MMSTA64 www.diodes.com 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1 . 20 1 10 100 1000 v , collector to emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2, collector emitter saturation voltage vs. collector current i c i b =1000 t = 150c a t = 25c a t = -50c a 1 10 1000 100 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fig. 5, gain bandwidth product vs. collector current v=5v ce 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1 . 6 0.1 1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fig. 4, base emitter voltage vs. collector current v=5v ce t = 150c a t=25c a t = -50c a 100 1000 10000000 10000 100000 1000000 1 10 1000 100 h , dc current fe gain (normalized) i , collector current (ma) c fig. 3, dc current gain vs collector current v=5v ce t = 150c a t=25c a t = -50c a 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 100 150 200 0
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